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SSM3K318R,LF Datasheet
Datasheet specifications
| Datasheet's name | SSM3K318R,LF |
|---|---|
| File size | 38.621 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet SSM3K318R,LF |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: TOSHIBA SSM3K318R,LF
- Power Dissipation (Pd): 1W
- Total Gate Charge (Qg@Vgs): 7nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 235pF@30V
- Continuous Drain Current (Id): 2.5A
- Gate Threshold Voltage (Vgs(th)@Id): 2.8V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 107mΩ@10V,2A
- Package: SOT-23(TO-236)
- Manufacturer: TOSHIBA