NTBGS1D5N06C دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NTBGS1D5N06C
|
|
حجم فایل
|
50.018
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi NTBGS1D5N06C
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
3.7W;211W
-
Total Gate Charge (Qg@Vgs):
78.6nC@10V
-
Drain Source Voltage (Vdss):
60V
-
Input Capacitance (Ciss@Vds):
6250pF@30V
-
Continuous Drain Current (Id):
35A;267A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@318uA
-
Reverse Transfer Capacitance (Crss@Vds):
66pF@30V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.29mΩ@10V,32A
-
Package:
TO-263-7
-
Manufacturer:
onsemi
