FGD3040G2-F085V 数据手册
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技术规格
- RoHS: true
- Type: -
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: onsemi FGD3040G2-F085V
- Operating Temperature: -55°C~+175°C@(Tj)
- Collector Current (Ic): 41A
- Power Dissipation (Pd): 150W
- Turn?on Delay Time (Td(on)): 0.9us
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): -
- Total Gate Charge (Qg@Ic,Vge): 21nC
- Turn?off Delay Time (Td(off)): 4.8us
- Collector-Emitter Breakdown Voltage (Vces): 400V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.25V@4V,6A
- Package: TO-252
- Manufacturer: onsemi
