RU1L002SNTL دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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RU1L002SNTL
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حجم فایل
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68.784
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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12
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
ROHM Semicon RU1L002SNTL
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
200mW
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
60V
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Input Capacitance (Ciss@Vds):
15pF@25V
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Continuous Drain Current (Id):
250mA
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Gate Threshold Voltage (Vgs(th)@Id):
2.3V@1mA
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Reverse Transfer Capacitance (Crss@Vds):
2pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.7Ω@10V,250mA
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Package:
SOT-323(SC-70)
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Manufacturer:
ROHM Semicon
