دیتاشیت BC856S,115
مشخصات دیتاشیت
| نام دیتاشیت |
BC856S,115
|
| حجم فایل |
51.873
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Nexperia BC856S,115
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Transistor Type:
2PCSPNP
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Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
300mW
-
Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
110@2mA,5V
-
Collector Cut-Off Current (Icbo):
15nA
-
Collector-Emitter Breakdown Voltage (Vceo):
65V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
300mV@100mA,5mA
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Package:
SOT-323-6
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Manufacturer:
Nexperia
