دیتاشیت AFGY120T65SPD
مشخصات دیتاشیت
| نام دیتاشیت |
AFGY120T65SPD
|
| حجم فایل |
93.431
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
10
|
مشخصات
-
RoHS:
true
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Type:
Trench Field Stop
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Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
onsemi AFGY120T65SPD
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
160A
-
Power Dissipation (Pd):
714W
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Turn?on Delay Time (Td(on)):
40ns
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Turn?on Switching Loss (Eon):
6.6mJ
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Total Gate Charge (Qg@Ic,Vge):
125nC
-
Turn?off Delay Time (Td(off)):
80ns
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Pulsed Collector Current (Icm):
360A
-
Turn?off Switching Loss (Eoff):
3.8mJ
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Diode Reverse Recovery Time (Trr):
107ns
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Collector-Emitter Breakdown Voltage (Vces):
650V
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Gate-Emitter Threshold Voltage (Vge(th)@Ic):
2.05V@15V,120A
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Package:
TO-247
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Manufacturer:
onsemi
