دیتاشیت BD14016S
مشخصات دیتاشیت
| نام دیتاشیت |
BD14016S
|
| حجم فایل |
71.893
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
4
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
onsemi BD14016S
-
Transistor Type:
PNP
-
Operating Temperature:
+150°C@(Tj)
-
Collector Current (Ic):
1.5A
-
Power Dissipation (Pd):
1.25W
-
Transition Frequency (fT):
-
-
DC Current Gain (hFE@Ic,Vce):
40@150mA,2V
-
Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
80V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@500mA,50mA
-
Package:
TO-126
-
Manufacturer:
onsemi
