NCEP092N10AS دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NCEP092N10AS
|
|
حجم فایل
|
78.039
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
6
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Wuxi NCE Power Semiconductor NCEP092N10AS
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
3.5W
-
Total Gate Charge (Qg@Vgs):
70nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
3650pF@50V
-
Continuous Drain Current (Id):
14A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.7V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
22pF@50V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
8.4mΩ@10V,14A
-
Package:
SOP-8
-
Manufacturer:
Wuxi NCE Power Semiconductor
