PBLS1501Y,115 دیتاشیت

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مشاهده دیتاشیت PBLS1501Y,115	دانلود دیتاشیت

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RoHS: true
Category: Triode/MOS Tube/Transistor/Digital Transistors
Datasheet: Nexperia PBLS1501Y,115
Transistor Type: 1 NPN - Pre-Biased,1 PNP
Collector Current (Ic): 500mA;100mA
Power Dissipation (Pd): 300mW
Transition Frequency (fT): 280MHz
DC Current Gain (hFE@Ic,Vce): 30@20mA,5V;150@100mA,2V
Collector Cut-Off Current (Icbo): 1uA;100nA
Collector-Emitter Breakdown Voltage (Vceo): 50V;15V
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 150mV@500uA,10mA;250mV@50mA,500mA
Package: SOT-323-6
Manufacturer: Nexperia