دیتاشیت IRF9Z24NPBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRF9Z24NPBF
|
| حجم فایل |
106.204
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
-
Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Infineon Technologies IRF9Z24NPBF
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
45W
-
Total Gate Charge (Qg@Vgs):
19nC@10V
-
Drain Source Voltage (Vdss):
55V
-
Input Capacitance (Ciss@Vds):
350pF@25V
-
Continuous Drain Current (Id):
12A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
175mΩ@10V,7.2A
-
Package:
TO-220
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Manufacturer:
Infineon Technologies
