- Home
- Download Datasheet
- Datasheet SQD50N06-09L-VB
SQD50N06-09L-VB Datasheet
Datasheet specifications
| Datasheet's name | SQD50N06-09L-VB |
|---|---|
| File size | 63.859 KB |
| File type | |
| Number of pages | 7 |
Download Datasheet SQD50N06-09L-VB |
Download Datasheet |
|---|
Other documentations
No other documentation was found!
Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec SQD50N06-09L-VB
- Power Dissipation (Pd): 136W
- Drain Source Voltage (Vdss): 60V
- Continuous Drain Current (Id): 50A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 10mΩ@10V,20A
- Package: TO-252
- Manufacturer: VBsemi Elec
