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PSMN1R2-30YLC,115 Datasheet
Datasheet specifications
| Datasheet's name | PSMN1R2-30YLC,115 |
|---|---|
| File size | 58.132 KB |
| File type | |
| Number of pages | 15 |
Download Datasheet PSMN1R2-30YLC,115 |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN1R2-30YLC,115
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 215W
- Total Gate Charge (Qg@Vgs): 78nC@10V
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 5093pF@15V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 1.95V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 1.25mΩ@10V,25A
- Package: SOT-669
- Manufacturer: Nexperia
