- Home
- Download Datasheet
- HD100N02
HD100N02 Datasheet
Datasheet specifications
| Datasheet's name | HD100N02 |
|---|---|
| File size | 70.123 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet HD100N02 |
Download Datasheet |
|---|
Other documentations
No other documentation was found!
Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: HL(Haolin Elec) HD100N02
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 87W
- Total Gate Charge (Qg@Vgs): 32nC@4.5V
- Drain Source Voltage (Vdss): 20V
- Input Capacitance (Ciss@Vds): 2.8nF@15V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 700mV@250uA
- Reverse Transfer Capacitance (Crss@Vds): 265pF@15V
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.9mΩ@4.5V,20A
- Package: TO-252
- Manufacturer: HL(Haolin Elec)
