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PSMN4R2-30MLDX Datasheet
Datasheet specifications
| Datasheet's name | PSMN4R2-30MLDX |
|---|---|
| File size | 77.568 KB |
| File type | |
| Number of pages | 13 |
Download Datasheet PSMN4R2-30MLDX |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN4R2-30MLDX
- Power Dissipation (Pd): 65W
- Drain Source Voltage (Vdss): 30V
- Continuous Drain Current (Id): 70A
- Gate Threshold Voltage (Vgs(th)@Id): 2.2V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 4.3mΩ@10V,25A
- Package: SOT1210
- Manufacturer: Nexperia