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SUD50P10-43L-GE3 Datasheet
Datasheet specifications
| Datasheet's name | SUD50P10-43L-GE3 |
|---|---|
| File size | 75.292 KB |
| File type | |
| Number of pages | 9 |
Download Datasheet SUD50P10-43L-GE3 |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Vishay Intertech SUD50P10-43L-GE3
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 8.3W;136W
- Total Gate Charge (Qg@Vgs): 160nC@10V
- Drain Source Voltage (Vdss): 100V
- Input Capacitance (Ciss@Vds): 4600pF@50V
- Continuous Drain Current (Id): 37.1A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 43mΩ@10V,9.2A
- Package: TO-252
- Manufacturer: Vishay Intertech
