دیتاشیت SSM6N56FE,LM
مشخصات دیتاشیت
| نام دیتاشیت |
SSM6N56FE,LM
|
| حجم فایل |
42.488
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
2 N-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
TOSHIBA SSM6N56FE,LM
-
Power Dissipation (Pd):
150mW
-
Total Gate Charge (Qg@Vgs):
1nC@4.5V
-
Drain Source Voltage (Vdss):
20V
-
Input Capacitance (Ciss@Vds):
55pF@10V
-
Continuous Drain Current (Id):
800mA
-
Gate Threshold Voltage (Vgs(th)@Id):
1V@1mA
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
235mΩ@4.5V,800mA
-
Package:
ES-6
-
Manufacturer:
TOSHIBA
