BFR93AE6327HTSA1 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BFR93AE6327HTSA1
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 90mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 6GHz
- DC Current Gain (hFE@Ic,Vce): 70@30mA,8V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 12V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: SOT-23(TO-236)
- Manufacturer: Infineon Technologies
