EMH2T2R Datasheet

UMH2N-TN

Datasheet specifications

Datasheet's name UMH2N-TN
File size 70.583 KB
File type pdf
Number of pages 10

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Digital Transistors
  • Datasheet: ROHM Semicon EMH2T2R
  • Transistor Type: 2 NPN - Pre-Biased
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 150mW
  • Transition Frequency (fT): 250MHz
  • DC Current Gain (hFE@Ic,Vce): 68@5mA,5V
  • Collector Cut-Off Current (Icbo): 500nA
  • Collector-Emitter Breakdown Voltage (Vceo): 50V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@500uA,10mA
  • Package: SOT-563
  • Manufacturer: ROHM Semicon

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