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- Datasheet UMH2N-TN
EMH2T2R Datasheet
Datasheet specifications
| Datasheet's name | UMH2N-TN |
|---|---|
| File size | 70.583 KB |
| File type | |
| Number of pages | 10 |
Download Datasheet UMH2N-TN |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Digital Transistors
- Datasheet: ROHM Semicon EMH2T2R
- Transistor Type: 2 NPN - Pre-Biased
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 150mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 68@5mA,5V
- Collector Cut-Off Current (Icbo): 500nA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 300mV@500uA,10mA
- Package: SOT-563
- Manufacturer: ROHM Semicon
