MUN5113T3G دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
MUN5113T3G
|
|
حجم فایل
|
50.018
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
14
|
مشخصات فنی
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Digital Transistors
-
Datasheet:
onsemi MUN5113T3G
-
Transistor Type:
One PNP - Pre-Biased
-
Collector Current (Ic):
100mA
-
Power Dissipation (Pd):
202mW
-
DC Current Gain (hFE@Ic,Vce):
80@5mA,10V
-
Collector Cut-Off Current (Icbo):
500nA
-
Collector-Emitter Breakdown Voltage (Vceo):
50V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
250mV@300uA,10mA
-
Package:
SC-70
-
Manufacturer:
onsemi
