SI2342DS-T1-GE3 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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SI2342DS-T1-GE3
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حجم فایل
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87.635
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Vishay Intertech SI2342DS-T1-GE3
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
2.5W
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Total Gate Charge (Qg@Vgs):
15.8nC@4.5V
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Drain Source Voltage (Vdss):
8V
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Input Capacitance (Ciss@Vds):
1070pF@4V
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Continuous Drain Current (Id):
6A
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Gate Threshold Voltage (Vgs(th)@Id):
800mV@250uA
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Drain Source On Resistance (RDS(on)@Vgs,Id):
17mΩ@4.5V,7.2A
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Package:
SOT-23
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Manufacturer:
Vishay Intertech
