دیتاشیت WNM3025-3/TR
مشخصات دیتاشیت
| نام دیتاشیت |
WNM3025-3/TR
|
| حجم فایل |
55.516
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
8
|
مشخصات
-
RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
WILLSEMI(Will Semicon) WNM3025-3/TR
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Operating Temperature:
-55°C~+150°C@(Tj)
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Power Dissipation (Pd):
270mW
-
Total Gate Charge (Qg@Vgs):
1.6nC@10V
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Drain Source Voltage (Vdss):
50V
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Input Capacitance (Ciss@Vds):
23pF@15V
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Continuous Drain Current (Id):
210mA
-
Gate Threshold Voltage (Vgs(th)@Id):
1V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
5pF@15V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.2mΩ@10V,450mA
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Package:
DFN-3(0.6x1)
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Manufacturer:
WILLSEMI(Will Semicon)
