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SE8810(ESD) Datasheet
Datasheet specifications
| Datasheet's name | SE8810(ESD) |
|---|---|
| File size | 59.04 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet SE8810(ESD) |
Download Datasheet |
|---|
Other documentations
No other documentation was found!
Technical specifications
- RoHS: true
- Type: 2 N-Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: SINO-IC SE8810(ESD)
- Power Dissipation (Pd): 1.5W
- Drain Source Voltage (Vdss): 20V
- Continuous Drain Current (Id): 7A
- Gate Threshold Voltage (Vgs(th)@Id): 1.2V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 20mΩ@4.5V,7A
- Package: TSSOP-8
- Manufacturer: SINO-IC
