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2SD965AG-R-AB3-R Datasheet
Datasheet specifications
| Datasheet's name | 2SD965L-R-T92-B |
|---|---|
| File size | 63.569 KB |
| File type | |
| Number of pages | 5 |
Download Datasheet 2SD965L-R-T92-B |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: UTC(Unisonic Tech) 2SD965AG-R-AB3-R
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 5A
- Power Dissipation (Pd): 500mW
- Transition Frequency (fT): 150MHz
- DC Current Gain (hFE@Ic,Vce): 340@500mA,2V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@3A,100mA
- Package: SOT-89-3
- Manufacturer: UTC(Unisonic Tech)
