2SD965AG-R-AB3-R Datasheet

2SD965L-R-T92-B

Datasheet specifications

Datasheet's name 2SD965L-R-T92-B
File size 63.569 KB
File type pdf
Number of pages 5

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: UTC(Unisonic Tech) 2SD965AG-R-AB3-R
  • Transistor Type: NPN
  • Operating Temperature: +150°C@(Tj)
  • Collector Current (Ic): 5A
  • Power Dissipation (Pd): 500mW
  • Transition Frequency (fT): 150MHz
  • DC Current Gain (hFE@Ic,Vce): 340@500mA,2V
  • Collector Cut-Off Current (Icbo): 100nA
  • Collector-Emitter Breakdown Voltage (Vceo): 30V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 1V@3A,100mA
  • Package: SOT-89-3
  • Manufacturer: UTC(Unisonic Tech)