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2SA1012G-R-TN3-R Datasheet
Datasheet specifications
| Datasheet's name | 2SA1012G-R-TN3-R |
|---|---|
| File size | 56.194 KB |
| File type | |
| Number of pages | 4 |
Download Datasheet 2SA1012G-R-TN3-R |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: UTC(Unisonic Tech) 2SA1012G-R-TN3-R
- Transistor Type: PNP
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 5A
- Power Dissipation (Pd): 15W
- Transition Frequency (fT): 60MHz
- Collector Cut-Off Current (Icbo): 1uA
- Collector-Emitter Breakdown Voltage (Vceo): 50V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 200mV@3A,150mA
- Package: TO-252
- Manufacturer: UTC(Unisonic Tech)
