BFP 420F H6327 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Infineon Technologies BFP 420F H6327
- Transistor Type: NPN
- Collector Current (Ic): 60mA
- Power Dissipation (Pd): 210mW
- Transition Frequency (fT): 25GHz
- DC Current Gain (hFE@Ic,Vce): 60@5mA,4V
- Collector Cut-Off Current (Icbo): -
- Collector-Emitter Breakdown Voltage (Vceo): 4.5V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): -
- Package: TSFP-4
- Manufacturer: Infineon Technologies
