MMBT3906 RFG 数据手册
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技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Taiwan Semiconductor MMBT3906 RFG
- Transistor Type: PNP
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 200mA
- Power Dissipation (Pd): 350mW
- Transition Frequency (fT): 250MHz
- DC Current Gain (hFE@Ic,Vce): 100@10mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 40V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 400mV@50mA,5mA
- Package: SOT-23(TO-236)
- Manufacturer: Taiwan Semiconductor