دیتاشیت MMBT3906 RFG
مشخصات دیتاشیت
نام دیتاشیت |
MMBT3906 RFG
|
حجم فایل |
69.226
کیلوبایت
|
نوع فایل |
pdf
|
تعداد صفحات |
7
|
مشخصات
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Taiwan Semiconductor MMBT3906 RFG
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Transistor Type:
PNP
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
200mA
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Power Dissipation (Pd):
350mW
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Transition Frequency (fT):
250MHz
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DC Current Gain (hFE@Ic,Vce):
100@10mA,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
40V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
400mV@50mA,5mA
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Package:
SOT-23(TO-236)
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Manufacturer:
Taiwan Semiconductor