دیتاشیت BC 850CW H6327
مشخصات دیتاشیت
| نام دیتاشیت |
BC 850CW H6327
|
| حجم فایل |
75.285
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
Infineon Technologies BC 850CW H6327
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Transistor Type:
PNP
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
100mA
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Power Dissipation (Pd):
250mW
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Transition Frequency (fT):
250MHz
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DC Current Gain (hFE@Ic,Vce):
520@2mA,5V
-
Collector Cut-Off Current (Icbo):
15nA
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Collector-Emitter Breakdown Voltage (Vceo):
45V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
200mV@100mA,5mA
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Package:
SOT-323-3
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Manufacturer:
Infineon Technologies
