2PB709ASL,215 Datasheet

2PB709ASL,235

Datasheet specifications

Datasheet's name 2PB709ASL,235
File size 52.455 KB
File type pdf
Number of pages 9

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Technical specifications

  • RoHS: true
  • Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
  • Datasheet: Nexperia 2PB709ASL,215
  • Transistor Type: PNP
  • Collector Current (Ic): 100mA
  • Power Dissipation (Pd): 250mW
  • Transition Frequency (fT): 80MHz
  • DC Current Gain (hFE@Ic,Vce): 290@2mA,10V
  • Collector Cut-Off Current (Icbo): 10nA
  • Collector-Emitter Breakdown Voltage (Vceo): 45V
  • Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@10mA,100mA
  • Package: SOT-23(TO-236)
  • Manufacturer: Nexperia