PSMN3R3-40YS,115 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN3R3-40YS,115
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 117W
- Total Gate Charge (Qg@Vgs): 49nC@10V
- Drain Source Voltage (Vdss): 40V
- Input Capacitance (Ciss@Vds): 2754pF@20V
- Continuous Drain Current (Id): 100A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 3.3mΩ@10V,25A
- Package: SOT-669
- Manufacturer: Nexperia