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PSMN8R5-60YS,115 Datasheet
Datasheet specifications
| Datasheet's name | PSMN8R5-60YS,115 |
|---|---|
| File size | 69.52 KB |
| File type | |
| Number of pages | 14 |
Download Datasheet PSMN8R5-60YS,115 |
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Nexperia PSMN8R5-60YS,115
- Operating Temperature: -55°C~+175°C@(Tj)
- Power Dissipation (Pd): 106W
- Total Gate Charge (Qg@Vgs): 39nC@10V
- Drain Source Voltage (Vdss): 60V
- Input Capacitance (Ciss@Vds): 2370pF@30V
- Continuous Drain Current (Id): 76A
- Gate Threshold Voltage (Vgs(th)@Id): 4V@1mA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 8mΩ@10V,15A
- Package: SOT-669
- Manufacturer: Nexperia