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MMBT8050D(J3Y) Datasheet
Datasheet specifications
| Datasheet's name | MMBT8050D(D9D) |
|---|---|
| File size | 76.726 KB |
| File type | |
| Number of pages | 2 |
Download Datasheet MMBT8050D(D9D) |
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Technical specifications
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: ST(Semtech) MMBT8050D(J3Y)
- Transistor Type: NPN
- Operating Temperature: +150°C@(Tj)
- Collector Current (Ic): 600mA
- Power Dissipation (Pd): 350mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 160@100mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@500mA,50mA
- Package: SOT-23
- Manufacturer: ST(Semtech)