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IRGP4069D-EPBF Datasheet
Datasheet specifications
| Datasheet's name | IRGP4069D-EPBF |
|---|---|
| File size | 97.087 KB |
| File type | |
| Number of pages | 11 |
Download Datasheet IRGP4069D-EPBF |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: Trench
- Category: Triode/MOS Tube/Transistor/IGBTs
- Datasheet: Infineon Technologies IRGP4069D-EPBF
- Operating Temperature: -55°C~+175°C@(Tj)
- Collector Current (Ic): 76A
- Power Dissipation (Pd): 268W
- Turn?on Delay Time (Td(on)): 46ns
- Input Capacitance (Cies@Vce): -
- Turn?on Switching Loss (Eon): 0.39mJ
- Total Gate Charge (Qg@Ic,Vge): 104nC
- Turn?off Delay Time (Td(off)): 105ns
- Pulsed Collector Current (Icm): 105A
- Turn?off Switching Loss (Eoff): 0.632mJ
- Diode Reverse Recovery Time (Trr): 120ns
- Collector-Emitter Breakdown Voltage (Vces): 600V
- Gate-Emitter Threshold Voltage (Vge(th)@Ic): 1.85V@15V,35A
- Package: TO-247
- Manufacturer: Infineon Technologies
