دیتاشیت IRGP4069D-EPBF
مشخصات دیتاشیت
| نام دیتاشیت |
IRGP4069D-EPBF
|
| حجم فایل |
97.087
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
11
|
مشخصات
-
RoHS:
true
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Type:
Trench
-
Category:
Triode/MOS Tube/Transistor/IGBTs
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Datasheet:
Infineon Technologies IRGP4069D-EPBF
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Operating Temperature:
-55°C~+175°C@(Tj)
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Collector Current (Ic):
76A
-
Power Dissipation (Pd):
268W
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Turn?on Delay Time (Td(on)):
46ns
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Input Capacitance (Cies@Vce):
-
-
Turn?on Switching Loss (Eon):
0.39mJ
-
Total Gate Charge (Qg@Ic,Vge):
104nC
-
Turn?off Delay Time (Td(off)):
105ns
-
Pulsed Collector Current (Icm):
105A
-
Turn?off Switching Loss (Eoff):
0.632mJ
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Diode Reverse Recovery Time (Trr):
120ns
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Collector-Emitter Breakdown Voltage (Vces):
600V
-
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
1.85V@15V,35A
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Package:
TO-247
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Manufacturer:
Infineon Technologies
