SS8050-H 数据手册
其他文档
未找到其他文档！
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Yangzhou Yangjie Elec Tech SS8050-H
- Transistor Type: NPN
- Operating Temperature: -55°C~+150°C@(Tj)
- Collector Current (Ic): 1.5A
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 100MHz
- DC Current Gain (hFE@Ic,Vce): 120@100mA,1V
- Collector Cut-Off Current (Icbo): 100nA
- Collector-Emitter Breakdown Voltage (Vceo): 25V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 500mV@800mA,80mA
- Package: SOT-23-3L
- Manufacturer: Yangzhou Yangjie Elec Tech