دیتاشیت NCE0202M
مشخصات دیتاشیت
| نام دیتاشیت |
NCE0202M
|
| حجم فایل |
82.361
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Wuxi NCE Power Semiconductor NCE0202M
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
1.5W
-
Total Gate Charge (Qg@Vgs):
12nC@10V
-
Drain Source Voltage (Vdss):
200V
-
Input Capacitance (Ciss@Vds):
580pF@25V
-
Continuous Drain Current (Id):
2A
-
Gate Threshold Voltage (Vgs(th)@Id):
1.8V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
3pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
520mΩ@10V,2A
-
Package:
SOT-89-3
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Manufacturer:
Wuxi NCE Power Semiconductor
