BC848B-7-F 数据手册
其他文档
未找到其他文档!
技术规格
- RoHS: true
- Category: Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
- Datasheet: Diodes Incorporated BC848B-7-F
- Transistor Type: NPN
- Operating Temperature: -65°C~+150°C@(Tj)
- Collector Current (Ic): 100mA
- Power Dissipation (Pd): 300mW
- Transition Frequency (fT): 300MHz
- DC Current Gain (hFE@Ic,Vce): 200@2mA,5V
- Collector Cut-Off Current (Icbo): 15nA
- Collector-Emitter Breakdown Voltage (Vceo): 30V
- Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib): 600mV@5mA,100mA
- Package: SOT-23
- Manufacturer: Diodes Incorporated
