NCE70T1K2I دیتاشیت
مشخصات دیتاشیت
|
نام دیتاشیت
|
NCE70T1K2I
|
|
حجم فایل
|
80.352
کیلوبایت
|
|
نوع فایل
|
pdf
|
|
تعداد صفحات
|
8
|
مشخصات فنی
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Wuxi NCE Power Semiconductor NCE70T1K2I
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
41W
-
Total Gate Charge (Qg@Vgs):
8.8nC@10V
-
Drain Source Voltage (Vdss):
700V
-
Input Capacitance (Ciss@Vds):
304pF@50V
-
Continuous Drain Current (Id):
4A
-
Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
0.5pF@50V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
1.1Ω@10V,2A
-
Package:
TO-251
-
Manufacturer:
Wuxi NCE Power Semiconductor
