دیتاشیت FDY1002PZ
مشخصات دیتاشیت
| نام دیتاشیت |
FDY1002PZ
|
| حجم فایل |
68.049
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
7
|
مشخصات
-
RoHS:
true
-
Type:
2 P-Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
onsemi FDY1002PZ
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
625mW
-
Total Gate Charge (Qg@Vgs):
2.2nC@4.5V
-
Drain Source Voltage (Vdss):
20V
-
Input Capacitance (Ciss@Vds):
100pF@10V
-
Continuous Drain Current (Id):
830mA
-
Gate Threshold Voltage (Vgs(th)@Id):
700mV@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
18pF@10V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
280mΩ@4.5V,830mA
-
Package:
SC-89-6
-
Manufacturer:
onsemi
