دیتاشیت FQD2N60C-VB
مشخصات دیتاشیت
| نام دیتاشیت |
FQD2N60C-VB
|
| حجم فایل |
71.018
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
VBsemi Elec FQD2N60C-VB
-
Power Dissipation (Pd):
-
-
Total Gate Charge (Qg@Vgs):
-
-
Drain Source Voltage (Vdss):
650V
-
Input Capacitance (Ciss@Vds):
-
-
Continuous Drain Current (Id):
2A
-
Gate Threshold Voltage (Vgs(th)@Id):
-
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
3.8Ω@10V,2A
-
Package:
TO-252
-
Manufacturer:
VBsemi Elec
