دیتاشیت STH315N10F7-6
مشخصات دیتاشیت
| نام دیتاشیت |
STH315N10F7-6
|
| حجم فایل |
59.647
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
19
|
مشخصات
-
RoHS:
true
-
Type:
N Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
STMicroelectronics STH315N10F7-6
-
Operating Temperature:
-55°C~+175°C@(Tj)
-
Power Dissipation (Pd):
315W
-
Total Gate Charge (Qg@Vgs):
180nC@10V
-
Drain Source Voltage (Vdss):
100V
-
Input Capacitance (Ciss@Vds):
12.8nF@25V
-
Continuous Drain Current (Id):
180A
-
Gate Threshold Voltage (Vgs(th)@Id):
3.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
170pF@25V
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
2.1mΩ@10V,60A
-
Package:
H2PAK-6
-
Manufacturer:
STMicroelectronics
