دیتاشیت SUD50P04-08-GE3
مشخصات دیتاشیت
| نام دیتاشیت |
SUD50P04-08-GE3
|
| حجم فایل |
80.461
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
9
|
مشخصات فنی
-
RoHS:
true
-
Type:
P Channel
-
Category:
Triode/MOS Tube/Transistor/MOSFETs
-
Datasheet:
Vishay Intertech SUD50P04-08-GE3
-
Operating Temperature:
-55°C~+150°C@(Tj)
-
Power Dissipation (Pd):
2.5W;73.5W
-
Total Gate Charge (Qg@Vgs):
159nC@10V
-
Drain Source Voltage (Vdss):
40V
-
Input Capacitance (Ciss@Vds):
5380pF@20V
-
Continuous Drain Current (Id):
50A
-
Gate Threshold Voltage (Vgs(th)@Id):
2.5V@250uA
-
Reverse Transfer Capacitance (Crss@Vds):
-
-
Drain Source On Resistance (RDS(on)@Vgs,Id):
8.1mΩ@22A,10V
-
Package:
TO-252
-
Manufacturer:
Vishay Intertech
