دیتاشیت MMBTH10-7-F
مشخصات دیتاشیت
| نام دیتاشیت |
MMBTH10-7-F
|
| حجم فایل |
119.196
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
3
|
مشخصات
-
RoHS:
true
-
Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
-
Datasheet:
Diodes Incorporated MMBTH10-7-F
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Transistor Type:
NPN
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Operating Temperature:
-55°C~+150°C@(Tj)
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Collector Current (Ic):
50mA
-
Power Dissipation (Pd):
300mW
-
Transition Frequency (fT):
650MHz
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DC Current Gain (hFE@Ic,Vce):
60@4mA,10V
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Collector Cut-Off Current (Icbo):
100nA
-
Collector-Emitter Breakdown Voltage (Vceo):
25V
-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@4mA,400uA
-
Package:
SOT-23
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Manufacturer:
Diodes Incorporated
