CS4N60FA9R دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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CS4N60FA9R
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حجم فایل
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73.081
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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10
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
Wuxi China Resources Huajing Microelectronics CS4N60FA9R
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Operating Temperature:
+150°C@(Tj)
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Power Dissipation (Pd):
30W
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Total Gate Charge (Qg@Vgs):
14.5nC@10V
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Drain Source Voltage (Vdss):
600V
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Input Capacitance (Ciss@Vds):
590pF@25V
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Continuous Drain Current (Id):
4A
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Gate Threshold Voltage (Vgs(th)@Id):
4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
4pF@25V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
2.1Ω@10V,2A
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Package:
TO-220F-3
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Manufacturer:
Wuxi China Resources Huajing Microelectronics
