HYG050N13NS1B6 دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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HYG050N13NS1B6
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حجم فایل
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63.502
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
HUAYI HYG050N13NS1B6
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Operating Temperature:
+175°C@(Tj)
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Power Dissipation (Pd):
375W
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Total Gate Charge (Qg@Vgs):
165nC@10V
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Drain Source Voltage (Vdss):
135V
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Input Capacitance (Ciss@Vds):
11.662nF@75V
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Continuous Drain Current (Id):
200A
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Gate Threshold Voltage (Vgs(th)@Id):
3V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
181pF@75V
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Drain Source On Resistance (RDS(on)@Vgs,Id):
3.8mΩ@10V,50A
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Package:
TO-263-6
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Manufacturer:
HUAYI
