AO3400-HXY 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: HXY MOSFET AO3400-HXY
- Power Dissipation (Pd): 1.4W
- Drain Source Voltage (Vdss): 30V
- Input Capacitance (Ciss@Vds): 825pF@15V
- Continuous Drain Current (Id): 5.8A
- Gate Threshold Voltage (Vgs(th)@Id): 1.4V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 28mΩ@10V,5.8A
- Package: SOT-23(TO-236)
- Manufacturer: HXY MOSFET