BSS192PH6327FTSA1 数据手册
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技术规格
- RoHS: true
- Type: P Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies BSS192PH6327FTSA1
- Operating Temperature: -55°C~+150°C@(Tj)
- Power Dissipation (Pd): 1W
- Total Gate Charge (Qg@Vgs): 6.1nC@10V
- Drain Source Voltage (Vdss): 250V
- Input Capacitance (Ciss@Vds): 104pF@25V
- Continuous Drain Current (Id): 190mA
- Gate Threshold Voltage (Vgs(th)@Id): 2V@130uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 12Ω@10V,190mA
- Package: SOT-89-3
- Manufacturer: Infineon Technologies
