IPG20N06S2L-35 数据手册

IPG20N06S2L-35

数据手册规格

数据手册名称 IPG20N06S2L-35
文件大小 65.097 千字节
文件类型 pdf
页数 9

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技术规格

  • RoHS: true
  • Type: -
  • Category: Triode/MOS Tube/Transistor/MOSFETs
  • Datasheet: Infineon Technologies IPG20N06S2L-35
  • Power Dissipation (Pd): -
  • Total Gate Charge (Qg@Vgs): -
  • Drain Source Voltage (Vdss): -
  • Input Capacitance (Ciss@Vds): -
  • Continuous Drain Current (Id): -
  • Gate Threshold Voltage (Vgs(th)@Id): -
  • Reverse Transfer Capacitance (Crss@Vds): -
  • Drain Source On Resistance (RDS(on)@Vgs,Id): -
  • Package: TDSON-8
  • Manufacturer: Infineon Technologies

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