IPB60R160C6 数据手册
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技术规格
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: Infineon Technologies IPB60R160C6
- Power Dissipation (Pd): 176W
- Drain Source Voltage (Vdss): 600V
- Continuous Drain Current (Id): 23.8A
- Gate Threshold Voltage (Vgs(th)@Id): 3.5V@750uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 160mΩ@10V,11.3A
- Package: TO-263
- Manufacturer: Infineon Technologies
