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15N10 TO251-VB Datasheet
Datasheet specifications
| Datasheet's name | 15N10 TO251-VB |
|---|---|
| File size | 67.41 KB |
| File type | |
| Number of pages | 6 |
Download Datasheet 15N10 TO251-VB |
Download Datasheet |
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Other documentations
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Technical specifications
- RoHS: true
- Type: N Channel
- Category: Triode/MOS Tube/Transistor/MOSFETs
- Datasheet: VBsemi Elec 15N10 TO251-VB
- Power Dissipation (Pd): 2.7W
- Drain Source Voltage (Vdss): 100V
- Continuous Drain Current (Id): 15A
- Gate Threshold Voltage (Vgs(th)@Id): 3V@250uA
- Drain Source On Resistance (RDS(on)@Vgs,Id): 110mΩ@10V,15A
- Package: TO-251
- Manufacturer: VBsemi Elec
