FDD3N50NZTM-VB دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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FDD3N50NZTM-VB
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|
حجم فایل
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69.963
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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9
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مشخصات فنی
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RoHS:
true
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Type:
N Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
VBsemi Elec FDD3N50NZTM-VB
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Power Dissipation (Pd):
-
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
650V
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Input Capacitance (Ciss@Vds):
-
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Continuous Drain Current (Id):
4.5A
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Gate Threshold Voltage (Vgs(th)@Id):
-
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
1.8Ω@10V,4.5A
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Package:
TO-252
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Manufacturer:
VBsemi Elec
