HXY2333MI دیتاشیت
مشخصات دیتاشیت
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نام دیتاشیت
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HXY2333MI
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حجم فایل
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62.515
کیلوبایت
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نوع فایل
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pdf
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تعداد صفحات
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6
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مشخصات فنی
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RoHS:
true
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Type:
P Channel
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Category:
Triode/MOS Tube/Transistor/MOSFETs
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Datasheet:
HXY MOSFET HXY2333MI
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Operating Temperature:
-
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Power Dissipation (Pd):
-
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Total Gate Charge (Qg@Vgs):
-
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Drain Source Voltage (Vdss):
18V
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Input Capacitance (Ciss@Vds):
1210pF@10V
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Continuous Drain Current (Id):
7A
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Gate Threshold Voltage (Vgs(th)@Id):
1.4V@250uA
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Reverse Transfer Capacitance (Crss@Vds):
-
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Drain Source On Resistance (RDS(on)@Vgs,Id):
22mΩ@4.5V,6.5A
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Package:
SOT-23-3L
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Manufacturer:
HXY MOSFET
